SanDisk Corporation has achieved a significant technical
achievement with the development of the world's smallest 128
gigabit (Gb) NAND flash memory chip currently in production. The
semiconductor device can store 128 billion individual bits of
information on a single silicon die 170mm2 in size - a little more
than a quarter of an inch squared, or smaller than the area covered
by a U.S. penny.
In addition to reduced size, the 128Gb semiconductor device has
an industry leading three-bit per cell write performance of 18
megabytes (MB) per second. This level of performance is achieved
using SanDisk's patented advanced all bit line (ABL) architecture
and means that three-bit per cell technology could be extended to
certain product categories that use two-bit per cell NAND flash
memory.
The use of NAND flash memory in high tech equipment like
smartphones, tablets and solid state drives allows advances in the
full function, small form factor devices that are highly valued by
consumers. Shrinking the size of NAND flash memory allows smaller,
more powerful computing, communications and consumer electronics
devices to be built while keeping costs low.
The 128Gb NAND flash memory chip was developed jointly by teams
from SanDisk and Toshiba at SanDisk's Milpitas campus and was led
by Yan Li, director of Memory Design at SanDisk.
128Gb 3-Bit Per Cell NAND Flash
Memory on 19nm Technology with 18MB/s Write Rate and 400Mbps Toggle
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