High-Performance Embedded Flash Storage for Connected Consumer and Embedded Applications
The SANDISK iNAND CL EM181 Embedded Flash Drive (EFD) combines advanced 112-layer 3D TLC NAND technology with a high-performance e.MMC 5.1A interface to deliver reliable storage for connected consumer and embedded systems. Supporting capacities from 64GB1 to 256GB,1 iNAND CL EM181 is designed for a broad range of applications including set-top boxes, OTT devices, home gateways, smart TVs, security cameras, tablets, smartphones, and other connected devices requiring dependable, high-performance embedded storage.
High-Performance Embedded Flash Storage for Connected Consumer and Embedded Applications
The SANDISK iNAND CL EM181 Embedded Flash Drive (EFD) combines advanced 112-layer 3D TLC NAND technology with a high-performance e.MMC 5.1A interface to deliver reliable storage for connected consumer and embedded systems. Supporting capacities from 64GB1 to 256GB,1 iNAND CL EM181 is designed for a broad range of applications including set-top boxes, OTT devices, home gateways, smart TVs, security cameras, tablets, smartphones, and other connected devices requiring dependable, high-performance embedded storage.
High-Performance Embedded Flash Storage for Connected Consumer and Embedded Applications
The SANDISK iNAND CL EM181 Embedded Flash Drive (EFD) combines advanced 112-layer 3D TLC NAND technology with a high-performance e.MMC 5.1A interface to deliver reliable storage for connected consumer and embedded systems. Supporting capacities from 64GB1 to 256GB,1 iNAND CL EM181 is designed for a broad range of applications including set-top boxes, OTT devices, home gateways, smart TVs, security cameras, tablets, smartphones, and other connected devices requiring dependable, high-performance embedded storage.
Highlights
● 64GB, 128GB and 256GB capacities1
● e.MMC 5.1A interface with HS400; up to 400 MB/s bus transfer rate
● 112-layer 3D TLC NAND technology
● Up to 300 MB/s2 sequential read and 225 MB/s2 sequential write
● SmartSLC write buffer for burst-write performance
● Flexible true-SLC Enhanced User Data Area (EUDA)
● LDPC ECC, automatic refresh, advanced power protection, wear leveling, and block management
● Device Report with runtime health and diagnostic information
● -25°C to +85°C operating temperature
● JEDEC 153-ball, 11.5 x 13 x 1.0 mm package
Applications and Workloads
● Set-top boxes and OTT devices
● Home gateways
● Smart TVs and smart speakers
● Smart security cameras
● Smartphones and tablets
● eReaders
● Always-connected entry-level notebooks
● Data center logging
● Other embedded and connected systems
Highlights
● 64GB, 128GB and 256GB capacities1
● e.MMC 5.1A interface with HS400; up to 400 MB/s bus transfer rate
● 112-layer 3D TLC NAND technology
● Up to 300 MB/s2 sequential read and 225 MB/s2 sequential write
● SmartSLC write buffer for burst-write performance
● Flexible true-SLC Enhanced User Data Area (EUDA)
● LDPC ECC, automatic refresh, advanced power protection, wear leveling, and block management
● Device Report with runtime health and diagnostic information
● -25°C to +85°C operating temperature
● JEDEC 153-ball, 11.5 x 13 x 1.0 mm package
Applications and Workloads
● Set-top boxes and OTT devices
● Home gateways
● Smart TVs and smart speakers
● Smart security cameras
● Smartphones and tablets
● eReaders
● Always-connected entry-level notebooks
● Data center logging
● Other embedded and connected systems
Highlights
● 64GB, 128GB and 256GB capacities1
● e.MMC 5.1A interface with HS400; up to 400 MB/s bus transfer rate
● 112-layer 3D TLC NAND technology
● Up to 300 MB/s2 sequential read and 225 MB/s2 sequential write
● SmartSLC write buffer for burst-write performance
● Flexible true-SLC Enhanced User Data Area (EUDA)
● LDPC ECC, automatic refresh, advanced power protection, wear leveling, and block management
● Device Report with runtime health and diagnostic information
● -25°C to +85°C operating temperature
● JEDEC 153-ball, 11.5 x 13 x 1.0 mm package
Applications and Workloads
● Set-top boxes and OTT devices
● Home gateways
● Smart TVs and smart speakers
● Smart security cameras
● Smartphones and tablets
● eReaders
● Always-connected entry-level notebooks
● Data center logging
● Other embedded and connected systems
Specifications
- e.MMC 5.1A interface with HS400
- 112-layer 3D TLC NAND technology
- SmartSLC write buffer for burst-write performance
Specifications
- e.MMC 5.1A interface with HS400
- 112-layer 3D TLC NAND technology
- SmartSLC write buffer for burst-write performance
Specifications
- e.MMC 5.1A interface with HS400
- 112-layer 3D TLC NAND technology
- SmartSLC write buffer for burst-write performance
Ratings & Reviews
Support & Resources
Disclosures
- 1 GB = 1,000,000,000 bytes. Actual user capacity less.
- 1 MB/s = 1 million bytes per second. Based on internal testing; performance may vary depending upon usage conditions, drive capacity and other factors.
- 1 GB = 1,000,000,000 bytes. Actual user capacity less.
- 1 MB/s = 1 million bytes per second. Based on internal testing; performance may vary depending upon usage conditions, drive capacity and other factors.
- 1 GB = 1,000,000,000 bytes. Actual user capacity less.
- 1 MB/s = 1 million bytes per second. Based on internal testing; performance may vary depending upon usage conditions, drive capacity and other factors.